Monday 9th October, 11:00-12:00
Lecture Room 7, Information Engineering Building, Banbury Road
Solid state qubit platforms such as superconducting qubits and spin qubits, alongside trapped ions and neutral atoms, are currently the leading candidates for building larger scale quantum processors.
Especially spin qubits in semiconductor quantum dots are considered to be a promising qubit platform, due to to their small size, the potential to leverage established CMOS fabrication techniques, their long T1 time, high fidelity control and the possibility to isotopically purify semiconductors such as silicon or germanium to avoid hyperfine induced dephasing from nuclear spins. Recently hole spin qubits have gained high interest as they exhibit fast and all electrical qubit control due to a strong spin-orbit interaction, even when operated at temperatures above 1K.
We have implemented hole spin qubits in two different semiconductor device platforms: One is based on silicon MOS, while the second uses gate defined quantum dots in a planar germanium quantum well. I will present how we operate both of these device platforms, investigate device performance and characterise important qubit metrics, particularly at “hot” and “cold” operation temperatures. Further, I will give insight into our efforts towards assessing and improving device reproducibility.
